to-220-3l plastic-encapsulate mosfets cjp75n80 n-channel power mosfet description the cjp75n80 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. good stability and uniformity with high e as .this device is suitable for use in pwm, load switching and general purpose applications. feature ? advanced trench process technology ? special designed for convertors and power controls ? high density cell design for ultra low r ds(on) ? fully characterized avalanche voltage and current ? fast switching ? good stability and uniformity with high e as ? excellent package for good heat dissipation ? special process technology for high esd capability application ? power switching application ? hard switched and high frequency circuits ? uninterruptible power supply maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 75 gate-source voltage v gs 20 v continuous drain current i d 80 pulsed drain current (note1) i dm 320 a power dissipation (note 2 , t a =25 ) 2 w maximum power dissipation (note 3 , t c =25 ) p d 170 w single pulsed avalanche energy(note4) e as 580 mj thermal resistance from junction to ambient r ja 62.5 /w junction temperature t j 150 storage temperature t stg -55 ~+150 notes 1. repetitive rating: pulse width limited by maximum junction temperature 2. this test is performed with no heat sink at t a =25 3. this test is performed with infinite heat sink at t c =25 4. e as condition: t j =25 ,v dd =37.5v,v gs =10v,l=0.5mh,r g =25 ? . to-220-3l 1. gate 3 . source 2 . drain 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage bv dss v gs = 0v, i d =250a 75 gate-threshold voltage (note 1) v gs(th) v ds =v gs , i d =250a 2.0 4.0 v zero gate voltage drain current i dss v ds =75v, v gs =0v 1 a gate-body leakage current i gss v ds =0v, v gs =20v 100 na drain-source on-state resistance (note 1) r ds(on) v gs =10v, i d =40a 10 m ? forward transconductance (note 1) g fs v ds =10v, i d =40a 60 s dynamic characteristics (note 2) input capacitance c iss 4400 output capacitance c oss 340 reverse transfer capacitance c rss v ds =25v,v gs =0v,f =1mhz 260 pf switching characteristics (note 2) turn-on delay time t d (on) 17.8 rise time t r 11.8 turn-off delay time t d(off) 56 fall time t f v dd =30v, i d =2a, r l =15 ? , v gs =10v,r g =2.5 ? 14.6 ns total gate charge q g 100 gate-source charge q gs 20 gate-drain charge q gd v ds =30v,v gs =10v,i d =30a 30 nc source-drain diode characteristics diode forward current i s 80 diode pulsed forward current i sm 320 a diode forward voltage (note 1) v sd v gs =0v, i s =40a 1.2 v diode reverse recovery time (note 2) t rr 36 ns diode reverse recovery charge (note 2) q rr i f =75a , di/dt=100a/ s 56 nc notes: 1. pulse test: pulse width 300s, duty cycle 2 %. 2. these parameters have no way to verify. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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